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1. Compute the following: (a) A silicon wafer is uniformly doped with NA = 1015 cm-3. At T O K, compute n0 and Po (b) A semiconductor is doped with

impurities to concentration N such that N >> n. Assuming all impurities are ionized, and given that n = N and p = ni^2/N, is the impurity a donor or acceptor? EXPLAIN. (c) A piece of Si is held at 300 K under equilibrium conditions. Given that n = 10^5 cm^-3 , compute p. (d) A new piece of Si is held at 300 K, and the Fermi level is found to be located 259 meV above Ei. Compute n and p. (e) A nondegenerate sample of Ge is held at room temperature and in equilibrium conditions. If ni = 10^13 cm^-3 , n = 2p, and NA = 0, determine values for n and No.

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