16.1 Consider MOS transistors fabricated in a 65-nm pro- cess for which H,C=540 μA/V², C = 100 μA/V², V=-V=0.35 V, and VDD = 1 V. (a) Find R of an NMOS transistor with W/L = 1.5. (b) Find R., of a PMOS transistor with W/L = 1.5. (c) If R of the PMOS device is to be equal to that of the NMOS device in (a), what must (WIL), be?

Fig: 1