3. = The values of the circuit elements in Figure 3 are as follows: VoD (5000+a) mV, Rs = (5000+ẞ) Q, Ro=(20000+y) Q, RG1 = (30000+5) Q, RG2 = (70000+) Q, C= 10 µF. Vin 50 sin (20000mt) mV. The MOSFET parameters are: V = -(500+2) mV, HpCox= 100 μV/A², (W/L) = 8 um/1 μm, Apl = 0.01 V1. (i) (ii) (!!!) Calculate the DC (5 points) and small-signal components of Vout (5 points). Use LTSpice to plot Vour as a function time (5 points). Compare with the calculated results in (i) (5 points). Place a 10 µF bypass capacitor in parallel with R. (Cst) and repeat parts (i)- (iii) for the modified circuit. (5 points) www C Rat Raz VDD ww R$1 M₁ Rp1 outt Figure 3 (iv) To alleviate loading effect from R₁ of 50 Q, a common drain amplifier is used as shown in Figure 4. Given that RG31MQ, Rs2 = (100+B) Q, C=10 uF and the MOSFET parameters of M2 are: V=-(500+) mV, UpCox = 100 μA/V2, (W/L) = 400 um/1 μm, Apl = 0.01 V, calculate the DC and small-signal components of Vout2 - (10 points) (v) From (iv), Use LTSpice to plot Vout2 as a function time. (5 points). If the result of (iv) is different from simulated result, explain why. (5 points) Cs1 RG1 Rst R$2 C C с VDD Vin Raz ww M₁ + Vinz Rp1 Voun Figure 4 M₂ RL RG3 www W Voue

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3 the values of the circuit elements in figure 3 are as follows vod 50

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3. = The values of the circuit elements in Figure 3 are as follows: VoD (5000+a) mV, Rs = (5000+ẞ) Q, Ro=(20000+y) Q, RG1 = (30000+5) Q, RG2 = (70000+) Q, C= 10 µF. Vin 50 sin (20000mt) mV. The MOSFET parameters are: V = -(500+2) mV, HpCox= 100 μV/A², (W/L) = 8 um/1 μm, Apl = 0.01 V1. (i) (ii) (!!!) Calculate the DC (5