[4 points] (a) For the circuit in Fig. 5.2.1(a), find the val- ues of Wand RD to operate the MOSFET at ID= 0.2 mA and D-0.6 V. [6 points] (b) For the circuit in Fig. 5.2.1(b), find W, W2. and W3 to obtain V-0.5 V and V2 1.1V [18 minutes] 5.3 (c) If RL is disconnected, what does VD become? [2 points] (d) With R, disconnected, what is the largest Rp [3 points] that can be used while the MOSFET is remaining in saturation? 5.5 [20 minutes] [20 points] [10 points] +1.8V +5V IDRD Figure 5.3.1 The MOSFET in Fig. 5.3.1 has 0.5 V, K= 0.4 mA/V2, V=10V, and W/L-10. Find the value of Rp that results in i. Vp 0.1 V ii. Vp=1.5V In each case, find Ip and the incremental drain-to- source resistance of the MOSFET -5V (a) +5V [25 minutes] 5.4 115 points) Va +5V Rp RL 15 k +3 Vo 001 V (b) +5V Figure 5.4.1 -V=-5V The MOSFET in the circuit of Fig. 5.4.1 has V, 1 V and ke-2 mA/V², and the Early effect can be neglected. [6 points] (a) Find the values of Rg and Rp that result in the MOSFET operating with an overdrive voltage of 0.5 V and a drain voltage of 1.5 V. What is the resulting p value? [4 points] (b) If RL is reduced from 15 k2 to 10 k2, what Vp become? does -5V- Figure 5.5.1 br Ipe -Vo Qu -SV (c) The MOSFETs in the circuits of Fig. 5.5.1 have k=1 mA/V², |V|=1V, and 2=0. Sedia | Examination Questions for Microelectronic Circuit, Eighth Edition Oxford University Press 2020

Fig: 1