5-3 (b) +1 V [3 points] [5 points] (c) w-IV (d)=+2 V [3 points] [6 points] [6 points] (a) For the circuit in Fig. 5.5.1(a), find the values of Rp and Rs that result in the MOSFET oper- ating at the edge of the saturation region with ID=0.1 mA. [4 points] (b) For the circuit in Fig. 5.5.1(b), find ID and Rp. [10 points] (c) For the circuit in Fig. 5.5.1(c), find IDN. IDP, and Vo. Also, find the drain-to-source incremental resistance of each of Qy and Qp. (a) y=0V (e) y=-2V 5.7 [25 minutes] 5.6 [20 points] +IV Qr QN ww 10 k V₁o +IV 6 k Q Q Figure 5.6.1 -IV The transistors in the circuit of Fig. 5.6.1 have. kn kp 2 mA/V2 and --Vp=0.4 V. Find vo for each of the following cases: Figure 5.7.1 -1V The MOSFETs in the circuit of Fig. 5.7.1 have: Cox 400 μA/V2, V, 0.4V, 20, L = 0.4 μm, W₁ = 2 μm, and W2 W3 = 10 μm. Find R to obtain a reference current IREF of 40 μA. Also, find the values of V1, 12, V2, and V3. [3 points] [15 minutes] [15 points]

Fig: 1