Consider a silicon pn junction diode having doping concentrations of NA= 1x10¹5 cm -³ and ND= 1x10¹4 cm -3. Use textbook for any data not specified. a) Evaluate the built-in potential

at room temperature b) Calculate depletion thickness in micrometer c) Calculate maximum electric field (V/cm) - Note the value at X= 0 d) Use AFOR to simulate results obtained in parts a, b, and c. e) Use AFOR to apply a forward bias of 0.5 V to simulate current density f) Use AFOR to apply a reversed bias of -5 V to simulate current density SHOW your work. For simulation use a lifetime of 1 ms. Submit only the Table shown below: Parameter vjo Wdep Emax J (Va=0.5 V) J (Va= -5.0) Hand Calculation AFORS simulation