Consider a silicon pn junction diode having doping concentrations of NA= 1x10¹5 cm -³ and ND= 1x10¹4 cm -3. Use textbook for any data not specified. a) Evaluate the built-in potential at room temperature b) Calculate depletion thickness in micrometer c) Calculate maximum electric field (V/cm) - Note the value at X= 0 d) Use AFOR to simulate results obtained in parts a, b, and c. e) Use AFOR to apply a forward bias of 0.5 V to simulate current density f) Use AFOR to apply a reversed bias of -5 V to simulate current density SHOW your work. For simulation use a lifetime of 1 ms. Submit only the Table shown below: Parameter Vjo Wdep Emax J (Va= 0.5 V) J (Va= -5.0) Hand Calculation AFORS simulation

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consider a silicon pn junction diode having doping concentrations of n

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Consider a silicon pn junction diode having doping concentrations of NA= 1x10¹5 cm -³ and ND= 1x10¹4 cm -3. Use textbook for any data not specified. a) Evaluate the built-in potential at room temperature b) Calculate depletion thickness in micrometer c) Calculate maximum electric field (V/cm) - Note the value at X= 0 d