consider a substrate of silicon at t 300 k is doped with arsenic atoms
Question
Consider a substrate of silicon at T = 300 K is doped with arsenic atoms (donors) having a concentration of 3× 1015 cm-3 and with boron atoms (acceptor) having a concentration of3 x 1014 cm-3. Consider that Np and NA are not affected by temperature. [15 Points] At two different temperature points T = 300 K and T =700K, Is the material n- or p- type semiconductor? Justify your answer and explain the effect of the temperature on this. | Does temperature affect the Energy Fermi-Level? Justify your answer