Find the equilibrium electron and hole concentrations at thermal equilibrium for silicon at T =800 K with a doping level of No = 5 x 10¹6 cm ³ and NA= 0. Assume that all the dopant atoms are fully ionized.

a. Use the equation in problem 5b and verify that the intrinsic concentration for silicon at 800K is the value shown in the table above (n (800K) = 2.135 x 10¹7cm-³). b. Use the general quadratic formula for charge balance to determine the equilibrium carrier concentrations no and po.