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Gallium nitride (GaN) is a wide direct bandgap semiconductor material with Eg = 3.425 eV. a. Draw a simple band model showing Ec, Ev, Eg and the wavelength of light that would be emitted for an electron hole pair recombination process. b. The effective density of states in the conduction band is Ne = 1 x 1019 cm3 and the effective density of states in the valence band is NV = 5 x 1018 cm-3. Determine the intrinsic carrier concentration ni at room temperature (300K). c. If silicon donor atoms are implanted into the semiconductor such that the Fermi energyl evel is 0.167 eV below the conduction band, how many atoms of silicon are implanted assuming that all silicon atoms are ionized?

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