1. Consider a MOS (Metal Oxide Semiconductor) interface with

the following parameters:

-Oxide dielectric thickness = 3.5nm; relative dielectric constant

(€) = 20

-Semiconductor doping (p type) = 10%/cm³

A. Plot the low frequency (1Hz) normalized* capacitance vs.

voltage characteristics for the above MOS structure (ideal

case)

B. Plot the low frequency (1Hz) normalized* capacitance vs.

voltage characteristics for the above MOS structure assuming

an interface state density (D) = 10¹/cm² at the

dielectric/semiconductor interface (spread uniformly through

the Silicon band gap)

C. For the MOS interface (with D = 10"/cm²), plot the

it

normalized* capacitance vs. voltage characteristics for 3

different doping values: 10%/cm³, 10¹/cm³, and 10%/cm³.

D. For the MOS interface (with D = 10"/cm²), plot the

normalized* capacitance vs. voltage characteristics for 3

different oxide thickness: 3.5nm, 5nm, 6nm (er = 20 for all

three cases)