the following parameters:
-Oxide dielectric thickness = 3.5nm; relative dielectric constant
(€) = 20
-Semiconductor doping (p type) = 10%/cm³
A. Plot the low frequency (1Hz) normalized* capacitance vs.
voltage characteristics for the above MOS structure (ideal
case)
B. Plot the low frequency (1Hz) normalized* capacitance vs.
voltage characteristics for the above MOS structure assuming
an interface state density (D) = 10¹/cm² at the
dielectric/semiconductor interface (spread uniformly through
the Silicon band gap)
C. For the MOS interface (with D = 10"/cm²), plot the
it
normalized* capacitance vs. voltage characteristics for 3
different doping values: 10%/cm³, 10¹/cm³, and 10%/cm³.
D. For the MOS interface (with D = 10"/cm²), plot the
normalized* capacitance vs. voltage characteristics for 3
different oxide thickness: 3.5nm, 5nm, 6nm (er = 20 for all
three cases)