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(2) Calculate the product of the electron density n in the conduction band and the holes density p

in the valence band in a semiconductor under the conditions described below. The semiconductor

is characterized by an energy band-structure that is well approximated by parabolic bands near the

top of the valence band and near the bottom of the conduction band. The effective mass of the

electrons in the conduction band is me = 0.48mo, and the effective mass of the holes in the

valence band is m₁ = 0.96mo, where mo = 9.1 x 10-3¹ [kg] is the mass of the electron. The

bandgap of this material is E, = 0.85 [eV]. The bandgap is direct. The system is in thermodynamic

equilibrium at temperature T = 297[K] and the intrinsic carrier concentration at this temperature

is n = 10¹0 [cm³]. The semiconductor is doped with N₂ = 10¹6 [cm3] donor impurities and

NA = 5 x 10¹6 [cm3] acceptor impurities.

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Fig: 1