3) Silicon is doped with phosphorus to a density of 1021m3 A) What are the majority and minority carriers? B) Calculate n, p and the position of EF (this must

be measured relative to the edge of either the conduction or valence band, whichever is more convenient). C) What is the probability that states at the edge of the conduction band and valence band are occupied? D) Repeat the first part (A+B) for material doped with boron to the same density. E) How does the position of the Fermi level depend on doping?