5.17 Compare the maximum capacitance that can be achieved in an area 100 x 100 µm² by using either an MOS capacitor or a reverse-biased P*N junction diode. Assume an

oxide breakdown field of 8 x 106 V/cm, a 5V operating voltage, and a safety factor of two (i.e., design the MOS oxide for 10 V breakdown). The P*N junction is built by diffusing boron into N-type silicon doped to 106 cm^-3

Fig: 1