A Ge p-n junction is doped with an acceptor concentration of 1.50 x 10^16 cm^-3 on the p-type side, and with a donor

concentration of 8.40 x 10^15 cm^-3 on the n-type side. Assuming the junction is perfectly abrupt, and that all the dopants are

fully ionised at a temperature of 300 K, calculate the magnitude of the barrier potential.

Boltzmann's constant k = 1.38 x 10^-23 J K^-1

electronic charge e = 1.60 x 10^-19 C

Ge intrinsic carrier concentration at 300 K ni = 2.10 x 10^13 cm^-3

Select one:

O a. 0.325 V

O b.

5.20 x 10^-20 V

O c.

0.310 V

O d.

1.09 V

O e. 0.283 V

G