Here is a schematic portion of extrinsic semiconductor (Si dopedwith boron (B)) showing the valence electron distribution. Thisextrinsic semiconductor is formed by pre-deposition of B and drive-in diffusion methods. B

is first introduced to Si by pre-depositionstep following the Fick's second rule. During this doping step, thesurface concentration of B remained constant as 5.44 ×1025 atoms/m3 and B atoms diffused into Si at 1200°C for 10 h.The concentration profile of B follows the equation given below.The background concentration of B (Co) in Si is 2 x 1019 atoms/m³. surface concentration of B remained constant as 5.44 x1025 atoms/m³ and B atoms diffused into Si at 1200°C for 10 h.The concentration profile of B follows the equation given below.The background concentration of B (Co) in Si is 2 x 1019 atoms/m3. What is the concentration (atoms/m3) of B at 2 um below thesurface of Si? (+15)