One of the initial steps in fabricating integrated circuit (IC) devices is to grow an epitaxial layer on polished silicon wafers. The wafers are mounted on a six-faceted cylinder (two

wafers per facet), called a susceptor, which is spun inside a metal bell jar. The jar is injected with chemical vapors through nozzles at the top of the jar and heated. The process continues until the epitaxial layer grows to a desired thickness. In the epitaxial layer growth process, suppose that the three experimental factors, susceptor ration method, nozzle position, and deposition temperature are to be investigated at the two levels given in the Table. The purpose of this experiment is to find process conditions that is, the combinations of factor levels for A, B, C, which the average thickness can be close to the target 14.5 um. Please design this experiment based on the knowledge of 2k design and write down you experiment plan (steps and experimental runs) and statistical method for the data analysis.