uCox/2 (uA/V2)
Vth (V)
Lambda (V¹)
(for L-0.5um)
Cgdo (F/m)
Cjo (F/m²)
NMOS
120
0.5
0.15
2x10-10
10-3
Vad = 2.5V
Phi= 0.7V (built in potential of pn junction)
Cjo 0 bias capacitance of pn junction
Gate dielectric: SiO2, 10nm thick
PMOS
40
-0.5
0.2
2x10-10
10-3
0.7V
15. Region of operation for each device-linear or saturation.
2.5V
Fig. 1
1.5V
Calculate the following both for the NMOS and PMOS transistors in the inverter circuit
shown (Fig.1). The gate widths are 2um and lengths are 0.5um. The voltage at each node is
marked. Note the N-well is at Vdd.
Fig: 1