PARAMETER

uCox/2 (UA/V2)

Vth (V)

Lambda (V¹)

(for L-0.5um)

Cgdo (F/m)

Cjo (F/m²)

NMOS

120

0.5

0.15

2x10-10

103

Vad = 2.5V

Phi = 0.7V (built in potential of pn junction)

Cjo=0 bias capacitance of pn junction

Gate dielectric: SiO2, 10nm thick

PMOS

40

-0.5

0.2

2x10-10

103

0.7V

2.5V

6. Source to bulk capacitance for the NMOS. Note: the area of a source or drain is

device width times 0.5um.

Fig. 1

1.5V

Calculate the following both for the NMOS and PMOS transistors in the inverter circuit

shown (Fig.1). The gate widths are 2um and lengths are 0.5um. The voltage at each node is

marked. Note the N-well is at Vdd.