Problem 2: A 4H-SiC n-channel MOSFET with substrate doping NB=NA=1x1016 cm-3, a Chromium (Cr) Gate metal, Silicon Nitride (Si3N4) insulator, and oxide thickness of 200 Aº has been fabricated. The total oxide charge Qox =5x1010 qC/cm2 (Neglect other types of oxide charges), the gate length is 1 um, and the gate width is 20 um. Find Wmax, VFB, VT, the current at VD=2V and VG=5V, and the saturation current for the device at VG=5V. n Ng is p-doped n-MOSFET

Fig: 1