Problem 4 (30 Marks, 6 Marks each): Consider a Si sample of length 10 um and across-sectional area 1 um?, uniformly doped with 1018 cm Arsenic (As), maintained at room temperature of T°= 300 Kº. A 1 volt is applied across as shown in Figure 4: a) Si sample for parts A, B, and C: A. What are the electron and hole concentrations n and p in this sample? B. Estimate the resistance of the sample C. Quantitatively (no calculation is required), how would the resistance of this sample change if it were to be additionally doped with 2x1018 cm3 Boron, elaborate in your answer?

Fig: 1

Fig: 2

Fig: 3

Fig: 4

Fig: 5