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Q1) Design a IL dB equal-ripple low pass filter with a cut-off frequency of fc GHz and attenuation of AT dB at twice the cut-off frequency. The filter should be matched to a Z1 Q microstrip line.

a) Calculate the values of individual inductancesand capacita nces that are needed for this filterstarting with a series element.

b) Sketch the LC equivalent circuit of the designed low-pass filter in ADS, run simulations, showS11, S22, S21, Group Delay between 1MHZ and3*fc.

c) Using a stepped impedance filter design calculate the lengths (B) of the sections to use for high impedance sections of characteristic impedance Zhi and low impedance sections of characteristic impedance Zlo .

d) Sketch the microstrip layout of the final filter in ADS, run EM simulations, show S11, S22, S21, Group Delay between 1MHZ and 3*fc. Find the total length (B.9 of the designed filter. (Substrate 60 mil thick FR-4 material, Metals: Perfect conductor.)

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### Question 45411

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Question II: Figure (2) shows the function g(t), draw the function g(-3t+4.5) showing the calculations for the points in the graph.(7.5 Marks)

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### Question 45410

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I: For the signal g(t) shown in figure (1) below:
a. Determine the period of the signal g(t). (1 Mar
b. Determine if g(t) represents power or energy signal and then calculate the value of it.(6.5 Morlca)

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### Question 42955

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Q4) A radio transmitter operated at f0 MHz has an internal impedance of ZG N and it delivers power of Pdel W to a matched load. It is connected to an antenna of impedance ZL Q via a loss-free ZO Q coaxial cable with length of L m. Find
a) The The venin equivalent of the transmitter together with the transmission line, i.e., with respect to load terminals.
b) The power delivered to the antenna.
c) The power reflected back to the generator.

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### Question 42954

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Q3) The results of a slotted-line experiment are plotted in the following figure. The length of the line is & cm; its characteristic impedance is Z0 Q.
b) The load impedance.
d) The reflection coefficient at the generator terminals.
a) The reflection coefficient at the load.
c) The input impedance.

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### Question 42953

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) For the T network shown below, R1 and R2 given on the table. Find
a) The scattering matrix
b) The reflected-to-incident power ratio.
c) The transmitted-to-incident power ratio.
d) The loss-to-incident power ratio.
e) What is the function of this device?

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### Question 41049

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2. Consider Amplifier and filter system

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### Question 41048

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Problem 1. Determine the Discrete-time Fourier Transform of A squarewave is
x[n]=(0.5)^{n} u[n]
\text { Plot the magnitude and phase of } H(\Omega) \text { in matlab. }

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### Question 40577

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A silicon sample is in equilibrium at T = 400k. It is given that the hole concentration of po =7.1 x 1016 cm-3 at this temperature.
What is the concentration of electrons?
| What is the type of the semiconductor? Justify your answer
[10 Points] Where is the Fermi level located with respect to the intrinsic level? (A numerical answer is required)

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### Question 40576

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Consider a substrate of silicon at T = 300 K is doped with arsenic atoms (donors) having a concentration of 3× 1015 cm-3 and with boron atoms (acceptor) having a concentration of3 x 1014 cm-3. Consider that Np and NA are not affected by temperature.
[15 Points] At two different temperature points T = 300 K and T =700K, Is the material n- or p- type semiconductor? Justify your answer and explain the effect of the temperature on this.
| Does temperature affect the Energy Fermi-Level? Justify your answer

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### Question 40575

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The energy band diagram of germanium shows the location of a particular energy levelE, at T =600 K.
[10 Points] What is the type of semiconductor represented in the energy diagram?Justify your answer.
Calculate the number of free electrons at energy level E,.
| Calculate the intrinsic carrier concentration.
| If Na is considered as zero, calculate the number of Donor atoms (ND).
Calculate the total number of free electrons.

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