Question 1: For a Germanium semiconductor material, EĢ=1.5 eV, Fermi level is located 1.40 eV above the highest level of the valence band. If E₁ and E₂ are located 0.03 eV and 0.05 above the bottom of the conduction band, respectively. Assume room temperature (T=300 K) and KT= 0.026 eV. Answer the following: a) [10 Point] Find the density of states at energy level E₁, if the semiconductor material is Ge. b) [10] Find the density of states at energy level E2, if the semiconductor material is Si. c) [20] Find the number of states between energy levels E₁ and E2.