Question 1:

For a Germanium semiconductor material, EĢ=1.5 eV, Fermi level is located 1.40 eV above

the highest level of the valence band. If E₁ and E₂ are located 0.03 eV and 0.05 above the

bottom of the conduction band, respectively. Assume room temperature (T=300 K) and

KT= 0.026 eV.

Answer the following:

a) [10 Point] Find the density of states at energy level E₁, if the semiconductor material is

Ge.

b) [10] Find the density of states at energy level E2, if the semiconductor material is Si.

c) [20] Find the number of states between energy levels E₁ and E2.