Silicon is doped with boron atoms. If 10^16 donors per cm³ are ionized at 300 K, determine (a) the carrier concentrations (i.e., the number of n an p per cm^-3)

(b) the temperature to which intrinsic Si would have to be heated to produce an equivalent number of electrons and (c) the conductivity of the chip at 100 °C. m_{e}=1350 \mathrm{~cm}^{2} / \mathrm{V} \cdot \mathrm{s}, m_{h}=480 \mathrm{~cm}^{2} / \mathrm{V} \cdot \mathrm{s}, E_{g}=1.11 \mathrm{eV}, \mathrm{E}_{\mathrm{A}}=0.06 \mathrm{eV}