(b) the temperature to which intrinsic Si would have to be heated to produce an equivalent number of electrons and (c) the conductivity of the chip at 100 °C. m_{e}=1350 \mathrm{~cm}^{2} / \mathrm{V} \cdot \mathrm{s}, m_{h}=480 \mathrm{~cm}^{2} / \mathrm{V} \cdot \mathrm{s}, E_{g}=1.11 \mathrm{eV}, \mathrm{E}_{\mathrm{A}}=0.06 \mathrm{eV}
Fig: 1
Fig: 2
Fig: 3
Fig: 4
Fig: 5