very large scale integrated circuit

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Question 40373


Very Large Scale Integrated Circuit

a) Compare between Programmable Logic Devices (PLD) (Programmable Logic Array(PLA)/ Programmable Array Logic (PAL)), Field Programmable Gate Array (FPGA), and Application-Specific Integrated Circuits (ASIC). Your comparison should include, but not be limited to:

IC Structure Programmability Time to Market Price Complexity

The comparison essay should not be longer than 300-words, and table/tables,equations, bullet points and schematics can be used.(6 marksl

b)Derive the Boolean expression and define the truth table for the output 'Q' with respect to inputs A, B and C for the logic circuit shown in Figure Q3.

Use the Boolean Algebra to optimize the design in Figure Q3, redraw the new logic circuit, and verify the equivalency.

Draw a schematic diagram for the function 'Z':

Z=\overline{((A . B)+C) . D}

Question 40372


Very Large Scale Integrated Circuit

a)Explain in no more than 300 words the difference between the large and the small signal models for a Bipolar Junction Transistor (BJT). Explain why the operating point in l-V characteristics of BJT plays a central role in determination of a signal model. Can this determination be done without the operating point?

b)Draw a schematic of the p-n-p Bipolar Junction Transistor (BJT) fabricated on a silicon substrate as a part of an integrated circuit. Explain your choice of the particularly doped silicon substrate and the order of fabrication steps in an eventual fabrication flow for the p-n-p BJT.

Draw a schematic of so-called Cascode Amplifier and explain how this configuration is related to the three circuit configurations (namely a common-base, a common-emitter,and a common-collector) for a Bipolar Junction Transistor (BJT) to act as an amplifier.Write a comparison of the Cascode Amplifier configuration with respect to the three common configurations with respect to: the voltage gain, the current gain, and the power gain.(6 marks7

d)Describe three applications of the Bipolar-CMOS-DMOS (BCD) power transistor of your choice in a custom chip. Write an essay of no longer than 300 words justifying why the BCD power transistor is an optimal solution for each of the three chip applications selected.

Question 40371


Very Large Scale Integrated Circuit

a)Describe in an essay no longer than 400 words your own understanding of a validity of Moore's Law for the digital CMOS transistor scaling. Address the following issues:the dimensions of transistors, the density of transistors, the operational frequency of transistors, the design of digital circuits made of the transistors, the number of cores in a processor, and the cost of the transistors related to the cost of fabrication and to the cost of a technology development.

b)Find at least four technology innovations which had to be introduced into the technology nodes to boost a performance of CMOS transistors in order to meet requirements for digital circuits and thus continue the scaling. Write a maximum of 300words essay to explain the technical reasons for your selected technology innovation.Justify that your technology chosen change is an innovation.18 marksl

c)MOSFET which has a conduction parameter of 50 mAN? and a threshold voltage of0.5 V. If the supply voltage is +15 Vand the load resistor is 365 Q, calculate the values of the resistors required to bias the MOSFET amplifier at 1/3 (VDD).A common source MOSFET amplifier is to be constructed using an n-channel

d)How is a gain (A) in a MOSFET based amplifier related to the input resistance (RIN)and the output resistance (RouT) ?1 morl1

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