The N-type MOSFET transistor in the Figure.3 below has the following parameters VTN = 0.6V, kn= 120 µA/V², (W/L) = 80. Design the circuit such that ID= 1.6 mA and Rin = 400 k OHMS Note: Do not make any assumptions about R1 and R2, please solve for both R1 and R2.

Fig: 1

Fig: 2

Fig: 3