Problem 3 You are asked to design a 4H-SiC p-MOSFET, which will be fabricated on the same chip with the n-MOSFET of problem 2. The 4H-SiC p-MOSFET will be used with the device of Problem 2 to build a CMOS logic gate (See Figure below). Therefore, both devices should have the same gate metal, same gate oxide material, same oxide thickness, and same oxide charge density. Since the p-MOSFET requires n-type region, such region was implanted to produce net donor doping of 1x1015 donors/ cm-3. (a) What donor concentration you should implant to obtain a net doping of NB = 1x1015 donors/cm3, for the n-type layer under the p-type gate, as shown on the right hand side of the figure below? (b) Calculate VT. (c) It is required for the p-MOSFET to have saturation current Ipss = - 10 mA at VG =- 5V, what is the gate width Z, if the gate length, L= 1 um? n +. D n-type p-type n-MOSFET p-MOSFET

Fig: 1