Electronics Devices

Questions & Answers

1) Consider the Hall Effect setup below. Find the Hall Field and associated Hall Voltage for both a positive (h+) and negative (e-) charge.


e) Calculate current at which it crosses applied bias at zero volts (Va-0 in part b).


Part b. From the chart, estimate (roughly) the number of transistors per IC in 2012. Using your estimate and Moore's Law, what would you predict the number of transistors per IC to be in 2040?


Semiconductors and their electrical conduction 1. Table 1 shows the electron effective mass of some common semiconductors. Assume that these semiconductors are all intrinsic and electrons and holes in all semiconductors have the same scattering rate (i.e. To = Th) a) Which semiconductor will have the highest electrical conductivity? b) Which semiconductor will have the lowest electrical conductivity? c) Silicon is widely used in electronic devices. Our smartphones are based on silicon transistors and the solar cell industry is dominated by silicon. From your calculations in a) and b), comment on the electrical conductivity of silicon compared to gallium arsenide under these assumptions. Why might we use it in devices instead of gallium arsenide? Hint: Think about the assumptions we have made in the question.


Design an Aluminum-Si Schottky diode that fits the current-voltage characteristics of Figure 3.10, page 156 of Muller and Kamins (3rd ed. of textbook) with : Is= 8.371E-12 A, n=1.066, Area=4.2E-6 cm².


2) Consider table 2.4 (pp159). If a 10 mV/cm Hall Field is desired for every 0.5 A/cm² of current density, what magnetic field would be required, given the sensor is constructed from Aluminum? Provide your answer in Tesla (T).


3) Consider silicon with a hole and electron concentration of 2 x 100 cm-3, a hole mobility Hp = 400 cm²Vs, and an electron mobility = 2000 cm²V-s. Calculate the conductivity in S/cm.


1. Draw the circuit schematic for the voltage doubler, like Figure 4. Use an input signal of 1 kHz sine wave with an amplitude of 0.7 Vrms. Assume the forward threshold voltage of the diode is 0.4 V. Use Rs = 100 , RL = 10 kn. Assume CB is fully charged at steady state. 2. Calculate the peak output voltage at steady state. [A-2] 3. Calculate the expected peak-to-peak ripple voltage due to capacitor C₁ discharging. [A-3] 4. Calculate the DC value, which is given by the average value of the ripple wave. [X-1] To find this, you will have to find how much the output voltage discharges through RL. Then find the time-average of the steady-state DC signal during the charging and discharging cycles. 5. Record the values in Table 1. [T-1] 6. Sketch the input and output waveforms in steady state, showing two waves, clearly labeling all axes and marking all relevant voltage and time values. [A-4] [A-1]


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