2. Figure 1 shows a p-n junction diode made from GaAs. It has a concentration

of 1016 acceptor atoms cm3 on its p-type doped side and a concentration of

1019 donor atoms cm³ on the n-type doped side. The intrinsic concentration of

GaAs is 2.1 x 106 cm3 and its relative permittivity is 12.9.

c) Calculate the magnitude of this in-built potential for the GaAs p-n junction

diode.

d) Calculate the depletion width for the p-n junction.

Hint: Use the knowledge that ND>>NA for this p-n junction diode.