3.7 Find the end-to-end resistance of a bar 15-um long, 3-μm wide, and 1-μm thick, made of the following materials at 25°C: (a) intrinsic silicon (b) n-doped silicon with N₁ = 5 x 10¹/cm²³/nTable P3.12 Doping Concentration (carriers/cm³) Intrinsic 1016 10" 100 M (cm²/V. s) 1350 1200 (c) n-doped silicon with N₂ = 5 x 10"/cm³ (d) p-doped silicon with N₁=5 x 10¹/cm³ (e) aluminum with resistivity of 2.8 μ2-cm Hp (cm²/V-s) 480 400 For intrinsic silicon, use the data in Table 3.1 in the Summary Tables supplement found online at www.oup. com/he/sedra-smith8e. For doped silicon, assume μ = 3μ, = 1200 cm³/V s. (Recall that R=pLIA.) D (cm²/s) 10 Po PHO 20 10 P(x) 0 Dp (cm²/s) n region W 74 x

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