#3 For intrinsic Silicon at 300K with a doping concentration of 10¹9 electrons

and light shining on it, described by the partial decay curve given:

Decay of electrons

Concentration

1.00E+20

1.00E+19

1.00E+18

1.00E+17

1.00E+16

Time is microseconds

1.3

A. Find the recombination rate a, in (¹/5-cm³)(5 Points)

B. Find the average carrier lifetime, Tin (s) (5 Points)

The recombination constanta, = 5.0X10-¹3

C. The carrier concentration, n(t) at t = Sus (5 Points)