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3. Suppose we have a pnp BJT made of Si. In terms of doping concentration, the emitter has 10¹⁹ cm³³,the base has 10¹8 cm³3, and the collector has 10¹7 cm³3. All plots should assume the emitter is on the left side. For this problem, we apply various voltage biases. (a) Draw the minority carrier distribution assuming VBE = 0 V, VCE = 0 V. Label the following:nominal majority and minority carrier concentrations, depletion region edge concentrations.

(b) Draw the minority carrier distribution assuming VBE = -0.7 V, VCE = -5 V. Label the following:nominal majority and minority carrier concentrations, depletion region edge concentrations.

(c) Draw the minority carrier distribution assuming VBE = -0.7 V, VCE = 0 V. Label the following:nominal majority and minority carrier concentrations, depletion region edge concentrations.

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