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4. Find the hole concentration and hole mobility of a

p-type semiconductor bar.

The Hall measurements is performed, and the

following parameters are measured.

Hall voltage = 3.0 mV

Intensity of magnetic field, B = 10-4 Webber/cm²

Sample dimensions: Thickness, 2x10-³ cm, Width,

5x10-2 cm, Length, 2x10-4 cm.

When applied a 2x10-4V a current of 3x10-³A was

observed across the sample.

Fig: 1