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Question

5. A piece of

semiconductor with band gap energy of

Eg = 1.0 eV, is illuminated uniformly by light with

photon energy of 2.0 eV. If minority electron

lifetime t = 0.1 ms.

a) Find the rate of excess charge carrier generation

(gop) that is required to generate 10¹0/cm³ excess

electron.

b) What optical power per cm³ is required to generate

carrier concentration of 10¹%/cm³.

c) Draw the band diagram and define the processes of

1) excitation, 2) radiation less decay, and 3)

recombination.

Fig: 1