Question

A semiconductor has a band gap of Eg = 1.1 eV. The effective density of states in the conduction band (Ne) is equal to the effect density of states in the valence band (Nv). The doping level is 3.0 x 10¹5 cm3 of donor atoms, and the donor atom energy level is 0.2eV below the conduction band. The Fermi energy level is 0.25 eV below the conduction band edge. a. Draw the simple energy band diagram showing the valence band (Ev), conduction band(Ec), the Fermi energy level (Ef), the intrinsic energy level (Ei) and the band gap. b. Determine the intrinsic carrier concentration n; and the carrier concentration of electrons and holes at 300K.

Fig: 1

Fig: 2

Fig: 3