(a) Sketch the energy band diagram of a p-n junction in the steady-state, indicating the barrier Vo and theFermi level: i) With no bias applied ii) With a voltage of +V appiied iii) With a voltage of –V applied (b) In equilibrium, explain how the barrier forms in terms of the carrier currents. (c) Under forward bias, describe the change in minority carrier concentration on either side of the junction and the change in the depletion layer width. (d) A Si p-n junction has an accept or dopant concentration Na= 10'º cm in the p region and a donordopant concentration of Na= 106 cm in the n region. Assuming the semiconductor is non-degenerate,so that np= n² and that at room temperature (300 K) n; = 10'º cm* and all the dopants are fully ionised,calculate the junction barrier voltage at 300 K (give the answer in volts to two decimal places). (e) Will the barrier increase or decrease with temperature? Give a reason for your answer.

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a sketch the energy band diagram of a p n junction in the steady state

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(a) Sketch the energy band diagram of a p-n junction in the steady-state, indicating the barrier Vo and theFermi level: i) With no bias applied ii) With a voltage of +V appiied iii) With a voltage of –V applied (b) In equilibrium, explain how the barrier forms in terms of the carrier currents. (c) Under forward bias,