DELIVERABLES: A report, approximately 2 to 3 pages in length, with figures and calculations.If the results are not within specifications, discuss possible reasons for this. Please write this in the

style of a professional engineering report – take some pride in your work, in other words. Description Using the MATLAB code provided, perform a constant-source boron diffusion into a (100) silicon wafer doped to 1x10^16 cm³ with phosphorus to achieve a junction depth of 100±20% nm. Use a dose of 1×10^14 boron atoms/cm². Hints: 1. You do not need to add anything into the simulation to account for the wafer doping, you only need to be aware of it so that you can identify the junction depth. 2. You need to vary temperature and time. There are tables available that might reduce the number of iterations required. 3. You can email steven.durbin@wmich.edu if you get stuck.