Question
Problem 1 You are required to design a 3C-SiC p+-n-p transistor for high voltage application, see figure below. The requirement is to use the following doping 1.0x1017 cm-3 in the base region and 1x1016 cm-3 in the collector region. The bulk recombination is found to be 1.0x1015 centers/cm3, and the electron and hole capture cross-sections is is found to be 2x10-15 cm2. (Use P+ = Nv for SiC. You need to choose the doping for base and collector. In this Exam. I have already chosen the values for as shown above) (a) Obtain the base width WB that gives a common base gain =500, when VEB=2.2V and VCB =- 10V. (b) If the emitter area Ar=10um x 10um, calculate, the terminal currents IE, Ic, and IB. (c) Obtain the Common Emitter gain d. WEB W WCB XDE XnC WB
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