Using the appropriate equations calculate the value of R, needed to satisfy these design parameters.Also, use the value of VTN found in Circuit 1 to calculate the required value of VGSQ. Construct this circuit physically on a breadboard using your multimeter to measure Ip and set R1 and R2 such Ip= IDo. Note the value of VGs; is it the same as the value you calculated?

To complete this task, you will need to begin by calculating the values of Rp and Ing that satisfy the gain requirement. Once these values have been chosen, construct the circuit on your breadboard using your multimeter to measure the drain current, then power the circuit and vary Vcs until the current is equal to the calculated value of Ipo. To easily vary VGs it is suggested that a potentiometer be used in place of Ri and R2 with the wiper connected directly to the gate of the MOSFET.Measure the value of Vas that allows this Ing to flow, and then use this value to calculate the turn-on voltage (VrN) of the MOSFET accurate to two decimal places. Compare this measured value of VIN to the typical value of VrN listed in the MOSFET's datasheet and note any discrepancies. Once the circuit is operational measure the gain and calculate its value in decibels.