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  • Q1: a)Explain in no more than 300 words the difference between the large and the small signal models for a Bipolar Junction Transistor (BJT). Explain why the operating point in l-V characteristics of BJT plays a central role in determination of a signal model. Can this determination be done without the operating point? b)Draw a schematic of the p-n-p Bipolar Junction Transistor (BJT) fabricated on a silicon substrate as a part of an integrated circuit. Explain your choice of the particularly doped silicon substrate and the order of fabrication steps in an eventual fabrication flow for the p-n-p BJT. Draw a schematic of so-called Cascode Amplifier and explain how this configuration is related to the three circuit configurations (namely a common-base, a common-emitter,and a common-collector) for a Bipolar Junction Transistor (BJT) to act as an amplifier.Write a comparison of the Cascode Amplifier configuration with respect to the three common configurations with respect to: the voltage gain, the current gain, and the power gain.(6 marks7 d)Describe three applications of the Bipolar-CMOS-DMOS (BCD) power transistor of your choice in a custom chip. Write an essay of no longer than 300 words justifying why the BCD power transistor is an optimal solution for each of the three chip applications selected.See Answer
  • Q2:Design a 64*64 Sram array block. Each array block has 8 WL. I need total four such blocks. The arrangement should be such that the control block should be in the middle of the 4 blocks. Control block contains pre-decoder, decoder. The final output should be of 128 bits. Please provide diagram with all the above details along with peripheral circuits such as write drivers, pre charger circuits, sense amplifiers, output latches and FF, column mux and any other parts necessary. Please provide the individual sizes and configurations of each circuit block used.See Answer

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