1 suppose we have a pnp bjt made of si in terms of doping concentratio
1. Suppose we have a pnp BJT made of Si. In terms of doping concentration, the emitter has 10¹⁹ cm²³,the base has 10¹8 cm³3, and the collector has 10¹7 cm³3. All plots should assume the emitter is on the leftside. For this problem, we apply zero voltage bias. (a) Plot depletion region charge densities. Label local extrema and depletion region edges. Try todraw them to scale relative to each other. (b) Plot electric field; positive values mean pointing to the right. Label local extrema and depletion region edges. Try to draw them to scale relative to each other. (c) Plot electric potential, assuming the emitter is grounded. Label local extrema and depletion region edges. Try to draw them to scale relative to each other.
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