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Q1:1. Consider Si (E = 1.1 eV), Ge (E = 0.67 eV) and GaAs (Ec = 1.4 eV) a) Using the same vertical scale, draw a simple energy band diagram (showing E and E) for each of the three materials. b) On the energy band diagram for Si, illustrate an electron in the conduction band. c) On the energy band diagram for Ge, illustrate a hole in the valence band.See Answer
Q2: 4. Concentration questions with a twists a) A silicon wafer is uniformly doped p-type with NA=1016/cm³. At T = OK, what are the equilibrium hole and electron concentrations? b) A semiconductor is doped with an impurity concentration N such that N >> n; and all the impurities are ionized. Also, p = N and n = n²/N. Is the impurity a donor or an acceptor? Explain. c) The electron concentration in a piece of Si maintained at 300K under equilibrium conditions is 10%/cm³. What is the hole concentration? d) For a silicon sample maintained at T = 300K, the Fermi level is located 0.518eV above the intrinsic Fermi level. What are the hole and electron concentrations? e) In a nondegenerate germanium sample maintained under equilibrium conditions near room temperature, it is known that n₁ = 10¹³/cm³, n = 3p, and N₁ = 0. Determine n and ND.See Answer
Q3:Question 1 1x108 1x107 1x106 1x105 1x104 1x103. Si ². 0.2 0.4 a-SH Ge GaAs InP 1 InoGao 3AS06P036 1.0 0.9 1.2 0.8 0.6 0.8 (a) In the context of photodetectors and the interaction of light with semiconductor materials, what property exhibits the behaviour represented in the figure above? Label all the axes (including the units, and including both the upper and lower x axes). Define the quantity on the y axis and discuss the difference (if any) between its properties in direct and indirect band gap materials. [4 marks] Ino5G047As 1.4 0.7 1.6 1.8See Answer
Q4:1. A Si step junction maintained at room temperature under equilibrium conditions has a p- side doping of N₁=3 x 10¹5/cm³ and an n-side doping of ND=2 x 10¹5/cm³. Compute (a) Vbi (b) Xp, Xn and W (c) E at x = 0 (d) V at x = 0 (e) Make sketches that are roughly to scale of the charge density, electric field, and electrostatic potential as a function of position.See Answer
Q5:2. A pn junction diode has the doping profile sketched in the figure below. Make the assumption that Xn>xo for all applied biases of interest (Xn follows the same definition as in the lecture). (a) What is the built-in voltage across the junction? Justify your answer. (b) Invoking the depletion approximation, sketch the charge density p versus x inside the diode. (c) Obtain an analytical solution for the electric field, E(x), inside the depletion region. ND-NA Not N₂2 Xo -NASee Answer
Q6:8.2 Work out problems (25) 1. (3) Match the symbols with the options: NMOS, PMOS, or diode. Label of all device terminals. + 2. (5) Given 4 equally sized and matched transistors, draw a two output current mirror. One output should equal the reference current and the other output should double it. Assume A = 0. Inef ħ 3. (5) Why does IREF # IOUT in the circuit below? Assume both transistors are matched and in saturation. IREF 2 V 138/7.8 ¥ 4. (2) What is the purpose of the source follower output of the op amp? JOUT 3V 138/7.8See Answer
Q7:#2 Draw a 3D picture of a Simple Cube, the x,y,z axis and show where to measure, a, the lattice constant: (5 Points)See Answer
Q8:#3 Draw a 3D picture of a Body Centered Cube, the x,y,z axis and show where to measure, a, the lattice constant: (5 Points)See Answer
Q9:#4 In terms of the lattice constant a, show the formula to calculate the distance between nearest- neighbor atoms for: A: a bcc lattice? (10 points) B: a fcc lattice? (10 points)See Answer
Q10:#5 Assuming a cubic crystal, show the x,y and z axis and make a sketch of the following planes: A: (001) (10 points) B: (111) (10 points) C: (123) (10 points) D: (110) (10 points)See Answer
Q11:#6 For a bcc cube, assume it is fully packed (atoms touch one another): a) With a lattice constant, a, find the formula for the volume density (5 Points) b) If the lattice constant was, 5Å in part a), find the Volume Density in atoms/cm³ (5 Points)See Answer
Q12:#7 Find the Miller indices and vectors for the following x, y, z intercepts. Use the correct notation for the Miller index and the vectors. A: x = 2, y = 4, z = 9 (5 points) B: x = 1, y= 2, z =3 (5 points) C: x = 4, y = ∞, z = 4 (5 points)See Answer
Q13:Assignment #1 #8 identify two crystalline directions, or vectors, in a cubic crystal which are perpendicular to the [100] vector (5 points) Note: the cosine of the angle between three arbitrary vectors [h1, k1,11], [h2,k2,12] and [h3,k3,13] in 3D is: cos(0) = Fall 2023 h₁h₂+k₁k₂ + ₁42 (h₁² + k₁² + 1₁₂²) (h₂² + k₂² +1₂²)See Answer
Q14:2.7. For N₁ = 3 × 10¹7 cm-³, tox=6 nm, and VFB = -0.983 V, plot Q(VGB) using (a) (2.6.8) with (2.6.12); (b) (2.6.20), from VGB = VMO +0.6 V to VGB = 3 V. Comment on the accu- racy of (2.6.20). Assume initially do = 20 + 60, and modify this value if necessary to decrease the error.See Answer
Q15:DELIVERABLES: 1) Read all the instructions. 2) Follow the process (step by step) 3) You can choose any topic of your liking. 4) Provide with 4 pages pdf file (including reference) 5) The file submitted must fulfil all the criterion. 6) See reference files as well. 7) Single spaced || APA |See Answer
Q16:1- Calculate the voltages V₁ and V₂ in the following circuits. The MOSFET is characterized by V₁ = 1.2V and k',W/L = 3.2 mA/V². +10 V 4 ko 10 V 2 mASee Answer
Q17:2-The MOSFET DC biasing circuit given below is used to implement CS Amp. Given (W/L) - 1 mA/V², Vt = 1V, and RG1=1M Ohm, calculate RD and RG2. VDU = +5V Rus RG + w || 0% - 13V p0.5 mASee Answer
Q18:3- For the circuit below, calculate Rp and Rs to establish a drain current of 0.1 mA and a drain voltage of +3V. The MOS has Vt= 0.5V, unCox=400μA/V2, L=0.4 μm, and W-5 μm. Rp Rs Given 01-A/V* 3 V₂.05V L.0.1pm W 5pm Neglect the Early effect. (V₂ ID²C 0-1= 2x04x32 (V → Ves- V₁ = √² ·K-103V (1-03) V-74cm --Ves = -07 V Vs-(-1) 47+1 Ves =V₂ +0·2=0·5²+02=0+1==3*2₂²See Answer
Q19:24 4 The NMOS transistor in the circuit below replace the transistor with its T equivalent circuit, +VDD assuming λ = 0. Derive expressions for the vsvi and vd 7.36 +VDD infe Ro Rs O Small-sy 5/5 Vje-i Ro I -'m V Neglect Early affect (HW due on Sunday (10/15) Submit your solution to CTA 9 and solve problems 5.30-5.40 at the end of chapter 5 in the text. FIRSSee Answer
Q20:V SHOW ABWEI 5.30 A particular MOSFET has V₁ = 10 V. For operation at 10 μA and 100 μA, what are the expected output resistances? In each case, for a change in vps of 1 V, what percentage change in drain current would you expect?See Answer

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