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• Q1:1. Consider Si (E = 1.1 eV), Ge (E = 0.67 eV) and GaAs (Ec = 1.4 eV) a) Using the same vertical scale, draw a simple energy band diagram (showing E and E) for each of the three materials. b) On the energy band diagram for Si, illustrate an electron in the conduction band. c) On the energy band diagram for Ge, illustrate a hole in the valence band.See Answer
• Q2:4. Concentration questions with a twists a) A silicon wafer is uniformly doped p-type with NA-10¹6/cm³. At T = OK, what are the equilibrium hole and electron concentrations? b) A semiconductor is doped with an impurity concentration N such that N >>n; and all the impurities are ionized. Also, p= N and n = n²/N. Is the impurity a donor or an acceptor? Explain. c) The electron concentration in a piece of Si maintained at 300K under equilibrium conditions is 10%/cm³. What is the hole concentration?See Answer
• Q3:Say, you want to make a digital logic circuit made of fast n type and p type devices. You have materials A,B,C,D to choose from. The ratio of electron effective masses for materials A,B,C and D is 1:2:4:3. The ratio of hole effective masses for materials A,B,C and D are 4:1:3:2. Which materials from A,B,C and D you would like to choose for making those fast n type and p type devices?See Answer
• Q4:Question 1 1x108 1x107 1x106 1x105 1x104 1x103. Si ². 0.2 0.4 a-SH Ge GaAs InP 1 InoGao 3AS06P036 1.0 0.9 1.2 0.8 0.6 0.8 (a) In the context of photodetectors and the interaction of light with semiconductor materials, what property exhibits the behaviour represented in the figure above? Label all the axes (including the units, and including both the upper and lower x axes). Define the quantity on the y axis and discuss the difference (if any) between its properties in direct and indirect band gap materials. [4 marks] Ino5G047As 1.4 0.7 1.6 1.8See Answer
• Q5:For this homework assignment you will design a circuit that uses a transistor like an ON/OFF switch to control the flow of current through a relay's coil. When the transistor turns ON (saturation) current flows through the relay's coil and produces a magnetic field that actuates the relay's electro-mechanical switch contacts (they are brought into contact, or "closed") thereby turning the relay's mechanical switch ON. Likewise, when the transistor turns OFF (cutoff), current flowing through the relay's coil drops to zero Amps, the magnetic field around the relay's coil collapses, and this deactuates the relay's electro-mechanical switch contacts (the contacts are pulled apart, or "opened"), thereby turning OFF the relay's mechanical switch. The control signal that turns the transistor ON/OFF is supplied by a digital output pin on a microcontroller. When the microcontroller produces a logic HIGH output at a digital output pin, this output signal this turns the transistor ON (saturates); likewise, a logic LOW output signal at the digital output pin turns the transistor OFF (cutoff). HINTS When two single-pole (SP) switches are mechanically ganged together so that both switches actuate together (at the same time), this type of switch is described as a double-pole (DP) switch (a.k.a, a 2- pole switch). When three SP switches are mechanically ganged together, that switch is called a triple- pole (TP) switch (a.k.a., a 3-pole switch), and so on. The relay's coil designation is categorized as a single side stable.See Answer
• Q6:1. A Si step junction maintained at room temperature under equilibrium conditions has a p- side doping of N₁=3 x 10¹5/cm³ and an n-side doping of ND=2 x 10¹5/cm³. Compute (a) Vbi (b) Xp, Xn and W (c) E at x = 0 (d) V at x = 0 (e) Make sketches that are roughly to scale of the charge density, electric field, and electrostatic potential as a function of position.See Answer
• Q7:2. A pn junction diode has the doping profile sketched in the figure below. Make the assumption that Xn>xo for all applied biases of interest (Xn follows the same definition as in the lecture). (a) What is the built-in voltage across the junction? Justify your answer. (b) Invoking the depletion approximation, sketch the charge density p versus x inside the diode. (c) Obtain an analytical solution for the electric field, E(x), inside the depletion region. ND-NA Not N₂2 Xo -NASee Answer
• Q8:8.2 Work out problems (25) 1. (3) Match the symbols with the options: NMOS, PMOS, or diode. Label of all device terminals. + 2. (5) Given 4 equally sized and matched transistors, draw a two output current mirror. One output should equal the reference current and the other output should double it. Assume A = 0. Inef ħ 3. (5) Why does IREF # IOUT in the circuit below? Assume both transistors are matched and in saturation. IREF 2 V 138/7.8 ¥ 4. (2) What is the purpose of the source follower output of the op amp? JOUT 3V 138/7.8See Answer
• Q9:5. (10) The waveforms in the following plots of N and I are input into an ideal op amp with +5 V supply rails. Sketch the expected Vout 1.5 Na DIN DOUT M 1 0.5 -0.5 -15 15 1 0.5 0 -0.5 -1.5 2.5 。 -25See Answer
• Q10:Name #1 Using the subdivided periodic table, list the following: a) Two binary semiconductor compounds from columns III and V: (10 Points) b) Two binary semiconductor compounds from columns II and VI: (10 Points)See Answer
• Q11:#2 Draw a 3D picture of a Simple Cube, the x,y,z axis and show where to measure, a, the lattice constant: (5 Points)See Answer
• Q12:#3 Draw a 3D picture of a Body Centered Cube, the x,y,z axis and show where to measure, a, the lattice constant: (5 Points)See Answer
• Q13:#4 In terms of the lattice constant a, show the formula to calculate the distance between nearest- neighbor atoms for: A: a bcc lattice? (10 points) B: a fcc lattice? (10 points)See Answer
• Q14:#5 Assuming a cubic crystal, show the x,y and z axis and make a sketch of the following planes: A: (001) (10 points) B: (111) (10 points) C: (123) (10 points) D: (110) (10 points)See Answer
• Q15:#6 For a bcc cube, assume it is fully packed (atoms touch one another): a) With a lattice constant, a, find the formula for the volume density (5 Points) b) If the lattice constant was, 5Å in part a), find the Volume Density in atoms/cm³ (5 Points)See Answer
• Q16:#7 Find the Miller indices and vectors for the following x, y, z intercepts. Use the correct notation for the Miller index and the vectors. A: x = 2, y = 4, z = 9 (5 points) B: x = 1, y= 2, z =3 (5 points) C: x = 4, y = ∞, z = 4 (5 points)See Answer
• Q17:Assignment #1 #8 identify two crystalline directions, or vectors, in a cubic crystal which are perpendicular to the [100] vector (5 points) Note: the cosine of the angle between three arbitrary vectors [h1, k1,11], [h2,k2,12] and [h3,k3,13] in 3D is: cos(0) = Fall 2023 h₁h₂+k₁k₂ + ₁42 (h₁² + k₁² + 1₁₂²) (h₂² + k₂² +1₂²)See Answer
• Q18:An n-type silicon substrate with a doping density of 1.4 x10¹6 cm³ Phosphorus is to be converted into p-type by diffusing Boron, so that the resistivity at T-400K is 32 N-cm. Assume that all atoms are fully ionized. Accurately calculate: (a) Doping level of Boron (b) Concentration of electron and hole carriers at 400 K (c) Concentration of electron and hole carriers at room temperature (d) Sketch room temperature Fermi energy level, accurately mark the key points (e) Total resistivity of the sample at room temperatureSee Answer
• Q19:2.3. Produce plots like those in Figs. 2.10, 2.12, and 2.13 for N = 5 x 1017 cm-³, tox=2 nm, and VFB = -0.8 V.See Answer
• Q20:2.6. For a device with M₁ = 1 × 10¹8 cm³, tox=2.5 nm, and VFB = -0.752 V, plot In Q vs. VGB in weak inversion, using (a) (2.6.8) with (2.6.12); (b) (2.6.26) with (2.6.27); and (c) (2.6.34) with (2.6.35). Comment on the accuracy of the last two approaches.See Answer

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