8.30 An NMOS transistor fabricated in a certain process is found to have an intrinsic gain of 40 V/V when operated a tan I, of 100 µA. Find the intrinsic

gain for 1p, = 25 µA and Ip, = 400 µ A. For each of these currents, find the factor by which g changes from its value at Ip = 100 µA.

Fig: 1