834 for an nmos transistor with l 05 m fabricated in the 013 um proces
8.34 For an NMOS transistor with L = 0.5 µm fabricated in the 0.13-um process specified in Table K.1 in Appendix K, find g r, and A, if the device is operated with Vov =0.15 V and 1,= 50 µA. Also, find the required device width W.
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