An n-type silicon substrate with a doping density of 1.4 x10¹6 cm³ Phosphorus is to be

converted into p-type by diffusing Boron, so that the resistivity at T-400K is 32 N-cm.

Assume that all atoms are fully ionized.

Accurately calculate:

(a) Doping level of Boron

(b) Concentration of electron and hole carriers at 400 K

(c) Concentration of electron and hole carriers at room temperature

(d) Sketch room temperature Fermi energy level, accurately mark the key points

(e) Total resistivity of the sample at room temperature