Question

1. A Si step junction maintained at room temperature under equilibrium conditions has a p- side doping of N₁=3 x 10¹5/cm³ and an n-side doping of ND=2 x 10¹5/cm³. Compute (a)

Vbi (b) Xp, Xn and W (c) E at x = 0 (d) V at x = 0 (e) Make sketches that are roughly to scale of the charge density, electric field, and electrostatic potential as a function of position.

Fig: 1