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Question

1. A Si step junction maintained at room temperature under equilibrium conditions has a p-

side doping of N₁=3 x 10¹5/cm³ and an n-side doping of ND=2 x 10¹5/cm³. Compute

(a) Vbi

(b) Xp, Xn and W

(c) E at x = 0

(d) V at x = 0

(e) Make sketches that are roughly to scale of the charge density, electric field, and

electrostatic potential as a function of position.

Fig: 1