Question 1 1x108 1x107 1x106 1x105 1x104 1x103. Si ². 0.2 0.4 a-SH Ge GaAs InP 1 InoGao 3AS06P036 1.0 0.9 1.2 0.8 0.6 0.8 (a) In the context of photodetectors

and the interaction of light with semiconductor materials, what property exhibits the behaviour represented in the figure above? Label all the axes (including the units, and including both the upper and lower x axes). Define the quantity on the y axis and discuss the difference (if any) between its properties in direct and indirect band gap materials. [4 marks] Ino5G047As 1.4 0.7 1.6 1.8