Analog Electronics

Given lpss = 12 mA and |V₂| = 6 V, dDraw a probable distribution of characteristic curves for the JFET (similar to the graph given in problem 5. You can use Shockley's equation).

For a p-channel JFET with parameters oflDss= 7.5mA and Vp= 4V. DDraw the characteristic transfer graph.

a. Plot transfer features directly from drain features. b. Using the graph to establish the values of IDSS y V₂, tplot transfer characteristics using Shockley's equation (ID = IDSS (1-VGS/VP)² c. Compare the characteristics of parts a) and b). Is there any important difference?

1. Assume that an observer calculates electric field and potential by measuring the force on a test charge. This observer moves along the path described by the green arrow. Finally, assume the system is in vacuum. (a) Plot and justify Q, E, V for a uniformly charged cylinder of pap, height h, radius to where h >> ro. The path goes through the center of the prism and is perpendicular to it. Let us assume V = 0 is defined at distance ₁. (b) Suppose the observer is far enough away that r» h. Discuss whether it is appropriate to express E, V as if the charge were a point charge.

For the emitter follower circuit (EF) shown below, find the value for the input impedance Rin in (MΩ) if current Ic=1.4mA, given that RE=10kΩ, RS=0, RL = ∞ .

For the Widlar current mirror circuit shown below, design the circuit to provide a current lout=100μA, if IR2=612μA. Hence, find the value of R₂ (in kmΩ).

Suppose the BJT drawn has Ic = 1 mA when VBE = 0.6 V. (a) Draw the transfer function plot for Rin for the range 10 kΩ < Rin < 100 kΩ, assuming Rin < ZL for the entire range. (b) Assuming an ideal BJT, calculate the output impedance at the slave BJT's collector node. (c) Justify: what is the danger if Z₁ > Rin?