Consider a MOS capacitor on a P type Si substrate with a doping of5x1016 cm-3. The oxide thickness is 10 nm. a) Find Cox, Vfb, and Vt. b) Find the

accumulation charge (C/Cm2) at Vg=Vfb-1 V3.9xeo; Eg = 1.112 eV, ɛ, = 12xɛoGiven Eox%3D